Gvidas Astromskas

InAs nanowire metal-oxide-semiconductor capacitors

Stefano Roddaro, Kristian Nilsson, Gvidas Astromskas et al. · Applied Physics Letters · 2008 · 86 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +14

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Gvidas Astromskas, Kristian Storm, O. Karlström et al. · Journal of Applied Physics · 2010 · 43 citations · Full text

Materials Science, Inas Nanowire, Electrical Engineering +12

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

C. H. Wang, S. W. Wang, G. Doornbos et al. · Applied Physics Letters · 2013 · 35 citations

Wide-bandgap Semiconductor, Engineering, Cm−2 Ev−1 +16

Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires

O. Karlström, A. Wacker, K. Peter R. Nilsson et al. · Nanotechnology · 2008 · 28 citations · Full text

Device Modeling, Electrical Engineering, Semiconductor Device +13

Synthesis of Reduced Graphene Oxide with Adjustable Microstructure Using Regioselective Reduction in the Melt of Boric Acid: Relationship Between Structural Properties and Electrochemical Performance

Justina Gaidukevič, Rasa Pauliukaitė, Gediminas Niaura et al. · Nanomaterials · 2018 · 23 citations · Full text