B.J. Bae

Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic

Y. J. Song, J. H. Lee, S. H. Han et al. · 2018 · 86 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +15

Highly Scalable Phase Change Memory with CVD GeSbTe for Sub 50nm Generation

J.I. Lee, Hae‐Sim Park, S.L. Cho et al. · 2007 · 76 citations

Non-volatile Memory, Engineering, Computer Architecture +18

Trans–cis isomerization and structure of dimeric [Me2M-μ-N(H)NPh2]2 (M=Al, Ga)

Dongwon Cho, Jae E. Park, B.J. Bae et al. · Journal of Organometallic Chemistry · 1999 · 20 citations

Inorganic Chemistry, Trans–cis Isomerization, Chemistry +1

A novel integration of STT-MRAM for on-chip hybrid memory by utilizing non-volatility modulation

Jae-Hyun Park, Jihyun Lee, Jae Kyeong Jeong et al. · 2019 · 16 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO/sub 3//MOCVD PZT capacitor technology

Dong Chul Yoo, B.J. Bae, Jong-Chun Lim et al. · 2005 · 13 citations

Materials Engineering, Materials Science, Electrical Engineering +9