A. Hamada

A new aspect of mechanical stress effects in scaled MOS devices

A. Hamada, Takeshi Furusawa, Naoto Saito et al. · IEEE Transactions on Electron Devices · 1991 · 152 citations

Engineering, Mechanical Engineering, Integrated Circuits +20

Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude

R. Woltjer, A. Hamada, Eiji Takeda · IEEE Transactions on Electron Devices · 1993 · 77 citations

Device Modeling, P-mosfet Hot-carrier Degradation, Electrical Engineering +15

A new aspect on mechanical stress effects in scaled MOS devices

A. Hamada, Takeshi Furusawa, Eiji Takeda · 1990 · 24 citations

Engineering, Mos Device Characteristics, Mechanical Engineering +22

PMOSFET hot-carrier damage: oxide charge and interface states

R. Woltjer, A. Hamada, Eiji Takeda · Semiconductor Science and Technology · 1992 · 20 citations

Device Modeling, Electrical Engineering, Engineering +12

Hot-electron trapping activation energy in PMOSFET's under mechanical stress

A. Hamada, Eiji Takeda · IEEE Electron Device Letters · 1994 · 20 citations

Activation Energy, Electrical Engineering, Semiconductor Device +10