A new aspect of mechanical stress effects in scaled MOS devices

A. Hamada, Takeshi Furusawa, Naoto Saito, +1

IEEE Transactions on Electron Devices

EngineeringMechanical EngineeringIntegrated CircuitsNew AspectElectron Trapping +18

Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude

R. Woltjer, A. Hamada, Eiji Takeda

IEEE Transactions on Electron Devices

Device ModelingP-mosfet Hot-carrier DegradationElectrical EngineeringHot-carrier DegradationEngineering +13

A new aspect on mechanical stress effects in scaled MOS devices

A. Hamada, Takeshi Furusawa, Eiji Takeda

EngineeringMos Device CharacteristicsMechanical EngineeringSi ChipIntegrated Circuits +20

PMOSFET hot-carrier damage: oxide charge and interface states

R. Woltjer, A. Hamada, Eiji Takeda

Semiconductor Science and Technology

Device ModelingElectrical EngineeringEngineeringInterface StatesNanoelectronics +10

Hot-electron trapping activation energy in PMOSFET's under mechanical stress

A. Hamada, Eiji Takeda

IEEE Electron Device Letters

Activation EnergyElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics +8

VLSI reliability challenges: from device physics to wafer scale systems

Eiji Takeda, K. Ikuzaki, H. Katto, +6

Proceedings of the IEEE

EngineeringMeasurementComputer ArchitectureWafer Scale TestingEducation +23

Enzymatic synthesis of 2-keto-d-gluconate and 2-keto-d-galactonate from d-glucose and d-galactose with cell culture of Pseudomonas fluorescens and 2-keto-galactonate from d-galactono 1,4-lactone with partially purified 2-ketogalactonate reductase

Ritsuko Tanimura, A. Hamada, Kenji Ikehara, +1

Journal of Molecular Catalysis B Enzymatic

BiosynthesisEngineeringBiotransformationBiochemistryNatural Sciences +9

A scaling consideration on mechanical stress-induced hot-carrier effects

A. Hamada, Takeshi Furusawa, Naoto Saito, +1

Semiconductor Science and Technology

EngineeringMechanical EngineeringSi ChipMechanical StressMechanics +17

Hot-Carrier Detrapping Mechanisms in MOS Devices

F. E. Pagaduan, A. Hamada, Cary Y. Yang, +1

Japanese Journal of Applied Physics

Electrical EngineeringEngineeringFuture Device DesignNanoelectronicsThreshold Voltage Reversal +12

N^-source/drain compensation effects in submicrometer LDD MOS devices

A. Hamada, Yasuo Igura, R. Izawa, +1

IEEE Electron Device Letters

Low-power ElectronicsDevice ModelingElectrical EngineeringEngineeringVlsi Design +7