Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status

Yi Song, Huajie Zhou, Qiuxia Xu, +4

Journal of Electronic Materials

EngineeringVlsi DesignIntegrated CircuitsBiaxial StrainInterconnect (Integrated Circuits) +14

Buckling suppression of SiGe islands on compliant substrates

Haizhou Yin, R. Huang, Karl D. Hobart, +6

Journal of Applied Physics

EngineeringMechanical EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor Device +14

Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation

Xiang-Zheng Bo, Leonid P. Rokhinson, Haizhou Yin, +2

Applied Physics Letters

EngineeringAfm TipNanodevicesOptoelectronic DevicesIntegrated Circuits +19

Tunable uniaxial vs biaxial in-plane strain using compliant substrates

Haizhou Yin, Rebecca L. Peterson, Karl D. Hobart, +3

Applied Physics Letters

Thin Film PhysicsEngineeringThin Film Process TechnologySilicon On InsulatorSemiconductor Thin Films +19

Fully-depleted strained-Si on insulator NMOSFETs without relaxed SiGe buffers

Haizhou Yin, Karl D. Hobart, Rebecca L. Peterson, +4

Materials EngineeringElectrical EngineeringEngineeringSige Buffer LayerNanoelectronics +10

High performance cmos bulk technology using direct silicon bond (dsb) mixed crystal orientation substrates

Chun-Yung Sung, Haizhou Yin, Hong Ng, +21

EngineeringMixed Orientation SubstratesOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator +15

Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance

Yanbo Zhang, Huilong Zhu, Hao Wu, +31

IEEE Transactions on Electron Devices

SemiconductorsSemiconductor TechnologyElectrical EngineeringSelf-aligned Pocket WellEngineering +12

Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs

Guilei Wang, M. Moeen, A. Abedin, +14

Solid-State Electronics

Node PmosfetsElectrical EngineeringSige LayersEngineeringNanoelectronics +7

Punch through stop layer optimization in bulk FinFETs

Rui Li, Yunfei Liu, Keke Zhang, +3

Materials SciencePtsl Formation ProcessPhysical Design (Electronics)EngineeringPtsl Implantation +8

High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation

Haizhou Yin, Karl D. Hobart, Francis J. Kub, +3

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringSige Oxidation +12