Chih-Hong Hwang

Discrete-dopant-induced characteristic fluctuations in 16nm multiple-gate silicon-on-insulator devices

Yiming Li, Chih-Hong Hwang · Journal of Applied Physics · 2007 · 56 citations

Semiconductors, Device Modeling, Electrical Engineering +14

The effect of the geometry aspect ratio on the silicon ellipse-shaped surrounding- gate field-effect transistor and circuit

Yiming Li, Chih-Hong Hwang · Semiconductor Science and Technology · 2009 · 42 citations

Device Modeling, Electrical Engineering, Semiconductor Device +10

Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations

Yiming Li, Chih-Hong Hwang, Ming-Hung Han · Nanotechnology · 2010 · 29 citations

Device Modeling, Electrical Engineering, Semiconductor Device +15

Discrete-Dopant-Fluctuated Threshold Voltage Roll-Off in Sub-16 nm Bulk Fin-Type Field Effect Transistors

Yiming Li, Chih-Hong Hwang · Japanese Journal of Applied Physics · 2008 · 20 citations

Engineering, Nanodevices, Discrete Dopants +16

Statistical variability in FinFET devices with intrinsic parameter fluctuations

Chih-Hong Hwang, Yiming Li, Ming-Hung Han · Microelectronics Reliability · 2010 · 14 citations

Device Modeling, Electrical Engineering, Engineering +5