375-GHz-bandwidth photoconductive detector

Yi Chen, Steven L. Williamson, T. Brock, +2

Applied Physics Letters

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Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors

Yibo Yuan, T. Brock, P. Bhattacharya, +2

IEEE Photonics Technology Letters

PhotonicsOptical MaterialsEngineeringLaser ScienceOptical Transmission System +11

A D-band monolithic fundamental oscillator using InP-based HEMTs

Youngwoo Kwon, D. Pavlidis, T. Brock, +1

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Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors

Jamie Phillips, K. Kamath, T. Brock, +1

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesIngaas/algaas Modulation +12

A D-band monolithic fundamental oscillator using InP-based HEMT's

Youngwoo Kwon, D. Pavlidis, T. Brock, +1

IEEE Transactions on Microwave Theory and Techniques

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Photoluminescence and electro-optic properties of small (25–35 nm diameter) quantum boxes

L. Davis, K. K. Ko, W.-Q. Li, +6

Applied Physics Letters

Quantum PhotonicsOptical MaterialsEngineeringOptoelectronic DevicesLuminescence Property +15

Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band

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IEEE Transactions on Microwave Theory and Techniques

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Monolithically integrated InP-based front-end photoreceivers

Y. Zebda, R. Lai, P. Bhattacharya, +3

IEEE Transactions on Electron Devices

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Characteristics of 0.8- and 0.2- mu m gate length In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/InP (0.53>or=x>or=0.70) modulation-doped field-effect transistors at cryogenic temperatures

R. Lai, P. Bhattacharya, Da Seul Yang, +3

IEEE Transactions on Electron Devices

Semiconductor TechnologyElectrical EngineeringEngineeringCryogenic TemperaturesElectronic Engineering +9

Gate-controlled negative differential resistance in drain current characteristics of AlGaAs/InGaAs/GaAs pseudomorphic MODFETs

J. Laskar, A. Ketterson, James N. Baillargeon, +4

IEEE Electron Device Letters

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