IEEE Transactions on Microwave Theory and Techniques · 1993 · 34 citations · 14 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave OscillatorsMicrowave Semiconductor DevicesOscillatorsRadio-frequency Integrated CircuitsFeedback TopologyGallium Nitride Microwave Integrated CircuitsHigh-electron-mobility TransistorsHigh-frequency ElectronicsMonolithic Microwave Integrated CircuitsPower OutputRadio-frequency Integrated Circuit DesignTransistor-based Oscillators
The design, analysis and experimental characteristics of the first fundamental D-band monolithic high-electron-mobility transistor (HEMT) oscillator are reported. The circuit is based on a dual feedback topology and uses 0.1- mu m pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As HEMTs. It includes on-chip bias circuitry and an integrated E-field probe for direct radiation into the waveguide. An oscillation frequency of 130.7 GHz was measured, and the output power level was -7.0 dBm using HEMTs of small gate periphery (90 mu m). This represents the highest frequency of fundamental signal generation out of monolithic chips using three-terminal devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs
P. Ho, Ming-Yih Kao, P.C. Chao et al. · Electronics Letters · 1991 · 103 citations