A D-band monolithic fundamental oscillator using InP-based HEMT's

Abstract

The design, analysis and experimental characteristics of the first fundamental D-band monolithic high-electron-mobility transistor (HEMT) oscillator are reported. The circuit is based on a dual feedback topology and uses 0.1- mu m pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As HEMTs. It includes on-chip bias circuitry and an integrated E-field probe for direct radiation into the waveguide. An oscillation frequency of 130.7 GHz was measured, and the output power level was -7.0 dBm using HEMTs of small gate periphery (90 mu m). This represents the highest frequency of fundamental signal generation out of monolithic chips using three-terminal devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>