IEEE Photonics Technology Letters · 1997 · 62 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesPhotonic Integrated CircuitsSemiconductor LasersDistributed Bragg Reflector LasersEdge-emitting LasersLasersReactive Ion EtchingSemiconductor Laser FabricationSignal Modulation
We demonstrate a short-cavity edge-emitting 0.98-μm GaAs-based laser with semiconductor/air distributed Bragg reflector (DBR) mirrors made by reactive ion etching (RIE). The dc and small-signal modulation properties of 100-μm-long lasers have been measured and are characterized by I/sub th/=4.5 mA and f/sub -3dB/=30 GHz under pulsed conditions, respectively. The far-field pattern of light emanating from the DBR is also measured.
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S. Weisser, E.C. Larkins, K. Czotscher et al. · IEEE Photonics Technology Letters · 1996 · 84 citations · Full text