M.H. Cho

The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond

J.Y. Kim, Chang‐Seok Lee, S.E. Kim et al. · 2003 · 81 citations

Non-volatile Memory, Electrical Engineering, Data Retention Time +12

S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond

Young‐Wook Kim, H.J. Oh, D. S. Woo et al. · 2005 · 38 citations

Electrical Engineering, Data Retention Time, Engineering +12

A Cascade Open-Short-Thru (COST) De-Embedding Method for Microwave On-Wafer Characterization and Automatic Measurement

M.H. Cho · IEICE Transactions on Electronics · 2005 · 26 citations

Engineering, Measurement, Microwave Transmission +20

Highly Manufacturable, Cost-Effective, and Monolithically Stackable 4F² Single-Gated IGZO Vertical Channel Transistor (VCT) for sub-10nm DRAM

Daewon Ha, Wonsok Lee, M.H. Cho et al. · 2023 · 20 citations

A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs

D.H. Kim, J.Y. Kim, M. Huh et al. · 2004 · 19 citations

Engineering, Enhanced Storage Node, Unlimited Height +19