S. Poli

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

Konstantinos Rogdakis, S. Poli, Edwige Bano et al. · Nanotechnology · 2009 · 48 citations

Natural Sciences, Materials Science, Physics +17

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

S. Poli, Marco Pala · IEEE Electron Device Letters · 2009 · 43 citations

Natural Sciences, Materials Science, Physics +17

A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

Alessandro Cresti, Marco Pala, S. Poli et al. · IEEE Transactions on Electron Devices · 2011 · 33 citations

Engineering, Electrical Engineering, Physics +17

Full understanding of hot-carrier-induced degradation in STI-based LDMOS transistors in the impact-ionization operating regime

S. Poli, Susanna Reggiani, G. Baccarani et al. · 2011 · 24 citations

Engineering, Electrical Engineering, Microelectronics +16

Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor

S. Poli, Susanna Reggiani, G. Baccarani et al. · Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna) · 2010 · 21 citations

Engineering, Electrical Engineering, Microelectronics +16