Concepedia

Jerias Batista

JB

Statistics

Publications

12

Citations

502

H-Index

11

Active since

1997

Affiliations

University of Toronto(Current)

Universidade Federal do Maranhão

Universidade Estadual de Campinas (UNICAMP)

Universidade Federal do Ceará

Jerias Batista is an author at University of Toronto specializing in engineering, applied physics, and optoelectronics.

Top concepts

EngineeringApplied PhysicsOptoelectronicsOptical PropertiesElectrical EngineeringSemiconductorsPhysicsRadiometryMicroelectronicsOptical Materials

Publications per year

1997–2010

12

Publications

12

Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects

Andreas Mandelis, Jerias Batista, Derrick Shaughnessy · Physical review. B, Condensed matter · 2003 · 166 citations

Physical Principles, Engineering, Pcr Theory +26

Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry

Jerias Batista, Andreas Mandelis, Derrick Shaughnessy · Applied Physics Letters · 2003 · 84 citations

Optical Materials, Engineering, Carrier Mobility +22

Temperature dependent behavior of single walled MoO3 nanotubes: A Raman spectroscopy study

J. V. Silveira, Jerias Batista, Gilberto D. Saraiva et al. · Vibrational Spectroscopy · 2010 · 56 citations

Materials Science, Raman Spectroscopy Study, Nanoscale Science +9

Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers

Bincheng Li, Derrick Shaughnessy, Andreas Mandelis et al. · Journal of Applied Physics · 2004 · 40 citations

Engineering, Silicon On Insulator, Semiconductor Device +16

Three-layer photocarrier radiometry model of ion-implanted silicon wafers

Bincheng Li, Derrick Shaughnessy, Andreas Mandelis et al. · Journal of Applied Physics · 2004 · 39 citations · Full text

Semiconductors, Electrical Engineering, Ion Implantation +14

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