Derrick Shaughnessy

Infrared photocarrier radiometry of semiconductors:  Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects

Andreas Mandelis, Jerias Batista, Derrick Shaughnessy · Physical review. B, Condensed matter · 2003 · 166 citations

Physical Principles, Engineering, Pcr Theory +26

Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry

Jerias Batista, Andreas Mandelis, Derrick Shaughnessy · Applied Physics Letters · 2003 · 84 citations

Optical Materials, Engineering, Carrier Mobility +22

Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers

Bincheng Li, Derrick Shaughnessy, Andreas Mandelis · Journal of Applied Physics · 2004 · 50 citations · Full text

Engineering, Measurement, Education +19

Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers

Bincheng Li, Derrick Shaughnessy, Andreas Mandelis et al. · Journal of Applied Physics · 2004 · 40 citations

Engineering, Silicon On Insulator, Semiconductor Device +16

Three-layer photocarrier radiometry model of ion-implanted silicon wafers

Bincheng Li, Derrick Shaughnessy, Andreas Mandelis et al. · Journal of Applied Physics · 2004 · 39 citations · Full text

Semiconductors, Electrical Engineering, Ion Implantation +14