S. Moffatt

Opto-galvanic stabilized CO2 laser

A L S Smith, S. Moffatt · Optics Communications · 1979 · 47 citations

Optical Materials, Engineering, Laser Science +5

High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode

Gaurav Thareja, Saurabh Chopra, B. Adams et al. · IEEE Electron Device Letters · 2011 · 44 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Microscopical aspects of boron diffusion in ultralow energy implanted silicon

E. Napolitani, A. Carnera, E. Schroer et al. · Applied Physics Letters · 1999 · 41 citations

Materials Science, Enhanced Diffusion, Ultralow Energy +14

Ion implantation from the past and into the future

S. Moffatt · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1995 · 31 citations

Ion Implantation, Implantation (Embryology), Electrophysiology +2

High performance germanium n-MOSFET with antimony dopant activation beyond 1×10<sup>20</sup> cm<sup>−3</sup>

Gaurav Thareja, Jiale Liang, Saurabh Chopra et al. · 2010 · 31 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13