Hyung‐Joong Yun

Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer

M. Uma, N. Balaram, P.R. Sekhar Reddy et al. · Journal of Electronic Materials · 2019 · 67 citations

Engineering, Materials Engineering, Materials Science +16

Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

Zagarzusem Khurelbaatar, Yeon-Ho Kil, Hyung‐Joong Yun et al. · Journal of Alloys and Compounds · 2014 · 58 citations

Engineering, Electrical Engineering, Materials Science +16

Improvement of dry etch-induced surface roughness of single crystalline β-Ga2O3 using post-wet chemical treatments

Hoon-Ki Lee, Hyung‐Joong Yun, Kyu-Hwan Shim et al. · Applied Surface Science · 2019 · 58 citations

Engineering, Materials Engineering, Materials Science +16

Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer

A. Ashok Kumar, V. Rajagopal Reddy, V. Janardhanam et al. · Journal of Alloys and Compounds · 2012 · 40 citations

Engineering, Materials Engineering, Materials Science +16

Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

Zagarzusem Khurelbaatar, Min‐Sung Kang, Kyu-Hwan Shim et al. · Journal of Alloys and Compounds · 2015 · 27 citations

Engineering, Electrical Engineering, Materials Science +14