Ruifeng Yue

Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests

Xintian Zhou, Hongyuan Su, Yan Wang et al. · IEEE Transactions on Electron Devices · 2016 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses

Xintian Zhou, Hongyuan Su, Ruifeng Yue et al. · IEEE Transactions on Power Electronics · 2017 · 81 citations

Engineering, Electrical Engineering, Materials Science +17

4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

Xintian Zhou, Ruifeng Yue, Jian Zhang et al. · IEEE Transactions on Electron Devices · 2017 · 73 citations

Engineering, Electrical Engineering, Electronic Materials +16

N-type B-S co-doping and S doping in diamond from first principles

Lin Tang, Ruifeng Yue, Yan Wang · Carbon · 2018 · 67 citations

Natural Sciences, Materials Science, Physics +16

SiC Trench MOSFET With Reduced Switching Loss and Increased Short-Circuit Capability

Tongtong Yang, Yan Wang, Ruifeng Yue · IEEE Transactions on Electron Devices · 2020 · 53 citations

Engineering, Electrical Engineering, Microelectronics +14