B.P. Tinkham

Materials growth for InAs high electron mobility transistors and circuits

B. R. Bennett, B.P. Tinkham, J.B. Boos et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 31 citations

Materials Science, Semiconductors, Electrical Engineering +14

Highly conductive and transparent ITO films deposited at low temperatures by pulsed DC magnetron sputtering from ceramic and metallic rotary targets

C. David, B.P. Tinkham, P. Prunici et al. · Surface and Coatings Technology · 2016 · 31 citations

Materials Engineering, Materials Science, Low Temperatures +9

Growth of InAsSb-channel high electron mobility transistor structures

B.P. Tinkham, B. R. Bennett, R. Magno et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2005 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Room-temperature Mobilities +7

Narrow band gap InGaSb, InAlAsSb alloys for electronic devices

R. Magno, E. R. Glaser, B.P. Tinkham et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2006 · 21 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition

C. David, T. Girardeau, F. Paumier et al. · Journal of Physics Condensed Matter · 2011 · 15 citations

Thin Film Physics, Engineering, Zinc Oxide +20