Jaikwang Shin

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

Injun Hwang, Jongseob Kim, Hyuk Choi et al. · IEEE Electron Device Letters · 2013 · 271 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses

Jinjoo Park, Jun Hee Choi, Kiho Kong et al. · Nature Photonics · 2021 · 174 citations

Photonics, Electrical Engineering, Solid-state Lighting +11

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

Ki-Won Kim, Sungdal Jung, Dong‐Seok Kim et al. · IEEE Electron Device Letters · 2011 · 167 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13

A comparative study of structural changes in lithium nickel cobalt manganese oxide as a function of Ni content during delithiation process

Kyoungmin Min, Kihong Kim, Changhoon Jung et al. · Journal of Power Sources · 2016 · 146 citations

Materials Science, Extractive Metallurgy, Chemical Engineering +9

Band Gap Opening by Two-Dimensional Manifestation of Peierls Instability in Graphene

Sung‐Hoon Lee, Hyun‐Jong Chung, Jinseong Heo et al. · ACS Nano · 2011 · 81 citations · Full text