H.‐J. Bühlmann - Concepedia

Author

H.‐J. Bühlmann

École Polytechnique Fédérale de Lausanne

Also Known As

H J Buhlmann, H. -J. Bühlmann, H. J. Buhlmann, H. J. Bühlmann, H.-J. Buhlmann, H.-J. Bühlmann, H.-J. Bühlmann, H.J. Buhlmann, H.J. Bühlmann, H.‐J. Bühlmann

Publications

455

Citations

H-Index

Concepts

All Affiliations

École Polytechnique Fédérale de Lausanne Swiss Federal Institute of Metrology

About

H.‐J. Bühlmann is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	352
2	Applied Physics	11	12	352
3	Electrical Engineering	5	5	90
4	Natural Sciences	2	2	59
5	Materials Engineering	1	1	17

H.‐J. Bühlmann

Publications

370

Citations

H-Index

Page 1

	Year	Citations
Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy V. Wagner, O. Parillaud, H.‐J. Bühlmann, Journal of Applied Physics Materials ScienceSemiconductorsLuminescence IntensityWide-bandgap SemiconductorEngineering	2002	63
Blue lasing at room temperature in high quality factor GaN∕AlInN microdisks with InGaN quantum wells D. Simeonov, E. Feltin, H.‐J. Bühlmann, Applied Physics Letters PhotonicsRoom TemperaturePhotoluminescenceEngineeringPhysics	2007	61
Impurity and defect levels in beryllium-doped GaAs grown by molecular beam epitaxy P. Bhattacharya, H.‐J. Bühlmann, M. Ilegems, Journal of Applied Physics EngineeringOptoelectronic DevicesSemiconductorsElectronic DevicesBeryllium-doped Gaas	1982	46
Observation of the integer quantum Hall effect by magnetic coupling to a Corbino ring B. Jeanneret, B. D. Hall, H.‐J. Bühlmann, Physical review. B, Condensed matter SemiconductorsQuantum ScienceCategoryquantum ElectronicsQuantum Lattice SystemEngineering	1995	33
Selective oxidation of AlInN layers for current confinement in III–nitride devices J. Dorsaz, H.‐J. Bühlmann, J.‐F. Carlin, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesCurrent ConfinementElectronic Devices	2005	28
Influence of the device-width on the accuracy of quantization in the integer quantum Hall effect B. Jeanneret, B. Jeckelmann, H.‐J. Bühlmann, IEEE Transactions on Instrumentation and Measurement EngineeringMeasurementTopological Quantum StateQuantum EngineeringQuantum Computing	1995	26
Compensation effects in Si-doped GaAs grown by molecular beam epitaxy R.N. Nottenburg, H.‐J. Bühlmann, M. Frei, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1984	19
Characterization of AuGe / Ni / Au Contacts on GaAs / AlGaAs Heterostructures for Low‐Temperature Applications H.‐J. Bühlmann, M. Ilegems Journal of The Electrochemical Society SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	1991	19
Properties of alloyed AuGeNi-contacts on GaAs/Ga/AlAs-heterostructures D. Jucknischke, H.‐J. Bühlmann, R. Houdré, IEEE Transactions on Instrumentation and Measurement	1991	18
Epitaxy of Gallium Nitride by HVPE Using Low Temperature Intermediate Buffer Layers Deposited by MOVPE V. Wagner, O. Parillaud, H.‐J. Bühlmann, physica status solidi (a) Materials ScienceMaterials EngineeringAluminium NitrideEngineeringThick Gan Layers	1999	17

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