H.‐J. Bühlmann

Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy

V. Wagner, O. Parillaud, H.‐J. Bühlmann et al. · Journal of Applied Physics · 2002 · 63 citations · Full text

Materials Science, Semiconductors, Luminescence Intensity +15

Blue lasing at room temperature in high quality factor GaN∕AlInN microdisks with InGaN quantum wells

D. Simeonov, E. Feltin, H.‐J. Bühlmann et al. · Applied Physics Letters · 2007 · 61 citations · Full text

Photonics, Room Temperature, Photoluminescence +15

Impurity and defect levels in beryllium-doped GaAs grown by molecular beam epitaxy

P. Bhattacharya, H.‐J. Bühlmann, M. Ilegems et al. · Journal of Applied Physics · 1982 · 46 citations

Engineering, Optoelectronic Devices, Semiconductors +16

Observation of the integer quantum Hall effect by magnetic coupling to a Corbino ring

B. Jeanneret, B. D. Hall, H.‐J. Bühlmann et al. · Physical review. B, Condensed matter · 1995 · 33 citations · Full text

Semiconductors, Quantum Science, Categoryquantum Electronics +14

Selective oxidation of AlInN layers for current confinement in III–nitride devices

J. Dorsaz, H.‐J. Bühlmann, J.‐F. Carlin et al. · Applied Physics Letters · 2005 · 28 citations · Full text

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +18