Concepedia

Author

E. Gil-Lafon

Université Clermont Auvergne

Also Known As

E Gil-Lafon, E. Gil-Lafon, Evelyne Gil-Lafon, Gil-Lafon, Évelyne, Évelyne Gil-Lafon

32

Publications

307

Citations

8

H-Index

18

Concepts

All Affiliations

Université Clermont AuvergneCentre National de la Recherche Scientifique
EG

About

E. Gil-Lafon is an author at Université Clermont Auvergne specializing in engineering, applied physics, and physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

7

7

232

2

Applied Physics

7

7

232

3

Chemistry

2

2

45

4

Electrical Engineering

1

1

74

5

Materials Engineering

1

1

55

E. Gil-Lafon

×

7

Publications

232

Citations

7

H-Index

YearCitations

Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies

E. Gil-Lafon, J. Napierala, Dominique Castelluci,

Journal of Crystal Growth

2001

74

High quality InP on Si by conformal growth

O. Parillaud, E. Gil-Lafon, Bruno Gérard,

Applied Physics Letters

1996

55

Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen

E. Aujol, J. Napierala, Agnès Trassoudaine,

Journal of Crystal Growth

2001

24

Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces

Alberto Pimpinelli, R. Cadoret, E. Gil-Lafon,

Journal of Crystal Growth

2003

22

Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas

Agnès Trassoudaine, R. Cadoret, E. Gil-Lafon

Journal of Crystal Growth

2003

21

Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

A. M. Ardila, O. Martı́nez, M. Avella,

Journal of Applied Physics

2002

18

Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy

E. Gil-Lafon, J. Napierala, Alberto Pimpinelli,

Journal of Crystal Growth

2003

18

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