High quality InP on Si by conformal growth

Abstract

Conformal growth is a confined epitaxial lateral overgrowth technique previously used to achieve low dislocation density GaAs films on Si. Conformal growth was used here to obtain high quality InP films on silicon, starting from GaAs seeds. Detailed characterization of the InP films (chemical etching of dislocations, photoluminescence at 300 K, cross-section transmission electron microscopy) proved the high defect filtering power of this technique. Dislocations initially present in the GaAs seeds and dislocations generated at the InP/GaAs interface were blocked and did not propagate through the growing films. Dislocations densities below 5×105 cm−2 have been obtained in submicrometer-thick conformal InP films on Si.