Young Bae Ahn

Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Jong-Ho Lee, Gun Hwan Kim, Young Bae Ahn et al. · Applied Physics Letters · 2012 · 49 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

SiO₂doped Ge₂Sb₂Te₅thin films with high thermal efficiency for applications in phase change random access memory

Seung Wook Ryu, Ho-Ki Lyeo, Jong Ho Lee et al. · Nanotechnology · 2011 · 36 citations

The Role of the Methyl and Hydroxyl Groups of Low-k Dielectric Films on the Nucleation of Ruthenium by ALD

Jaeyeong Heo, Seok-Jun Won, Dail Eom et al. · Electrochemical and Solid-State Letters · 2008 · 27 citations

Engineering, Crystal Growth Technology, Solid-state Chemistry +22

Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer

Seung Wook Ryu, Young Bae Ahn, Hyeong Joon Kim et al. · Applied Physics Letters · 2012 · 26 citations

Materials Science, Non-volatile Memory, Electrical Engineering +13

The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory

Seung Wook Ryu, Jong Ho Lee, Young Bae Ahn et al. · Applied Physics Letters · 2009 · 20 citations

Materials Science, Semiconductors, Electrical Engineering +15