Changliang Qin

Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

G. L. Wang, M. Moeen, Ahmad Abedin et al. · Journal of Applied Physics · 2013 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin

Qingzhu Zhang, Huaxiang Yin, Jun Luo et al. · 2016 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

Guilei Wang, Jun Luo, Changliang Qin et al. · Nanoscale Research Letters · 2017 · 30 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Laser Powder Bed Fusion of GH4099 Superalloy: Parameter Optimization and Effect of Heat Treatment on Microstructure and Mechanical Properties

Yunfei Nie, Qian Tang, Zhonghua Li et al. · Additive Manufacturing Frontiers · 2024 · 27 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14nm nodes FinFET technology

Guilei Wang, Changliang Qin, Huaxiang Yin et al. · Microelectronic Engineering · 2016 · 26 citations

Engineering, Electrical Engineering, Materials Science +16