J.C. Brabant

The “trigonal chromium” in GaAs: A new no-phonon luminescence spectroscopy at 0.84 eV

J. Barrau, Do Xuan Thanh, M. Brousseau et al. · Solid State Communications · 1982 · 21 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +7

Thermal capture cross-section of free electrons at neutral gold centres in n-type silicon

J. Barbolla, M. Pugnet, J.C. Brabant et al. · physica status solidi (a) · 1976 · 20 citations

Engineering, Neutral Gold Centres, Silicon On Insulator +16

Studies of defects introduced by electron irradiation at 4.2 °K in <i>p</i>-silicon by thermally stimulated capacitance technique

J.C. Brabant, M. Pugnet, J. Barbolla et al. · Journal of Applied Physics · 1976 · 20 citations

Point Defects, Engineering, Defect Tolerance +16

The no-phonon luminescence at 0.84 eV in GaAs:Cr-splitting under uniaxial stress

J. Barrau, F. Voillot, M. Brousseau et al. · Journal of Physics C Solid State Physics · 1981 · 17 citations

Engineering, No-phonon Luminescence Lines, Electronic Structure +17

Energy levels for platinum and palladium in silicon measured by the dark transient capacitance technique

M. Pugnet, J. Barbolla, J.C. Brabant et al. · physica status solidi (a) · 1976 · 16 citations

Materials Science, Inorganic Chemistry, Electrical Engineering +14