C.J. Vineis - Concepedia

Author

C.J. Vineis

Massachusetts Institute of Technology

Also Known As

C. J. Vineis, C. Vineis, C.J Vineis, C.J. Vineis, Chris J. Vineis, Chris Vineis

Publications

974

Citations

H-Index

Concepts

All Affiliations

Massachusetts Institute of Technology MIT Lincoln Laboratory AmberWave (United States)

About

C.J. Vineis is an author at Massachusetts Institute of Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	12	890
2	Applied Physics	10	10	858
3	Electrical Engineering	6	6	595
4	Materials Engineering	2	2	110
5	Health Sciences	1	1	129

C.J. Vineis

Publications

901

Citations

H-Index

Page 1

	Year	Citations
Microwave dielectric properties of hexagonal perovskites C.J. Vineis, Peter K. Davies, T. Negas, Materials Research Bulletin Materials ScienceLead-free PerovskitesElectrical EngineeringDielectricsMultiferroics	1996	210
Design Considerations for 1.06-<tex>$mu$</tex>m InGaAsP–InP Geiger-Mode Avalanche Photodiodes J.P. Donnelly, Erik K. Duerr, K. A. McIntosh, IEEE Journal of Quantum Electronics Electrical EngineeringAvalanche Layer ThicknessEngineeringRadiation DetectionPhysics	2006	129
Lattice thermal conductivity of nanostructured thermoelectric materials based on PbTe Yee Kan Koh, C.J. Vineis, S.D. Calawa, Applied Physics Letters EngineeringPbte LayersThermoelectricsThermal ConductivitySemiconductor Nanostructures	2009	110
SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo, M. T. Currie, Anthony Lochtefeld, Applied Physics Letters EngineeringInsulator StructureIntegrated CircuitsSilicon On InsulatorWafer Scale Processing	2003	90
Carrier concentration and temperature dependence of the electronic transport properties of epitaxial PbTe and PbTe/PbSe nanodot superlattices C.J. Vineis, T. C. Harman, S.D. Calawa, Physical Review B Epitaxial PbteOptical MaterialsEngineeringTemperature DependencePhysical Property	2008	88
Afterpulsing in Geiger-mode avalanche photodiodes for 1.06μm wavelength K.E. Jensen, P. I. Hopman, Erik K. Duerr, Applied Physics Letters PhotonicsElectrical EngineeringTrap EnergyFree-running Geiger ModeEngineering	2006	69
Strained Si on insulator technology: from materials to devices T. A. Langdo, M. T. Currie, Zhiyuan Cheng, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsInsulator TechnologySemiconductor Device Fabrication	2004	55
In-situ reflectance monitoring of GaSb substrate oxide desorption C.J. Vineis, C.A. Wang, Klavs F. Jensen Journal of Crystal Growth Surface CharacterizationEngineeringSpectroscopySurface ScienceApplied Physics	2001	45
Silicon photodiodes with high photoconductive gain at room temperature X. Li, James E. Carey, Jason W. Sickler, Optics Express PhotonicsElectrical EngineeringPhotoelectric SensorEngineeringLow Bias Operation	2012	42
Complex dielectric function of biaxial tensile strained silicon by spectroscopic ellipsometry C.J. Vineis Physical Review B Materials ScienceMaterials EngineeringSi Deformation PotentialsEngineeringCrystalline Defects	2005	20

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