In-Kyeong Yoo

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials · 2011 · 2.2K citations

Engineering, Materials Engineering, Materials Science +14

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

Heejun Yang, Jinseong Heo, Seongjun Park et al. · Science · 2012 · 953 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

Myoung‐Jae Lee, Seungwu Han, Sang Ho Jeon et al. · Nano Letters · 2009 · 412 citations

Natural Sciences, Materials Engineering, Materials Science +17

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

Sungho Kim, Sae‐Jin Kim, Kyung Min Kim et al. · Scientific Reports · 2013 · 245 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

Myoung‐Jae Lee, Youngsoo Park, B. S. Kang et al. · 2007 · 221 citations

Engineering, Electrical Engineering, Materials Science +13