Y. Senzaki

Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

P. D. Kirsch, Manuel Quevedo-López, H. -J. Li et al. · Journal of Applied Physics · 2006 · 118 citations

Natural Sciences, Materials Engineering, Materials Science +17

A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films

Byoung Guan Lee, Kyu Jeong Choi, A. Hande et al. · Microelectronic Engineering · 2008 · 91 citations

Natural Sciences, Materials Engineering, Materials Science +6

High quality ultra thin CVD HfO/sub 2/ gate stack with poly-Si gate electrode

S.J. Lee, H.F. Luan, Weiping Bai et al. · 2002 · 48 citations

Engineering, Electrical Engineering, Materials Science +16

Performance and reliability of ultra thin CVD HfO/sub 2/ gate dielectrics with dual poly-Si gate electrodes

S.J. Lee, H.F. Luan, C.H. Lee et al. · 2002 · 46 citations

Engineering, Electrical Engineering, Materials Science +17

Effective work function modification of atomic-layer-deposited-TaN film by capping layer

K. Choi, Husam N. Alshareef, H.C. Wen et al. · Applied Physics Letters · 2006 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17