Hiroyuki Yoshimoto

Local $V_{\rm th}$ Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation

Nobuyuki Sugii, Ryuta Tsuchiya, Takashi Ishigaki et al. · IEEE Transactions on Electron Devices · 2010 · 109 citations

Engineering, Computer Engineering, Electrical Engineering +17

Comprehensive study on vth variability in silicon on Thin BOX (SOTB) CMOS with small random-dopant fluctuation: Finding a way to further reduce variation

Nobuyuki Sugii, Ryuta Tsuchiya, Takashi Ishigaki et al. · 2008 · 54 citations

Engineering, Computer Engineering, Electrical Engineering +15

Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes

Yuan Bu, Hiroyuki Yoshimoto, Naoki Watanabe et al. · Journal of Applied Physics · 2017 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor

Yuki Mori, Hiroyuki Yoshimoto, Ken’ichi Takeda et al. · Journal of Applied Physics · 2012 · 26 citations

Engineering, Electrical Engineering, Microelectronics +16

6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer

Naoki Watanabe, Hiroyuki Yoshimoto, Akio Shima et al. · Materials science forum · 2016 · 25 citations · Full text

Engineering, Electrical Engineering, Microelectronics +14