T. Nishino

Three-terminal superconducting device using a Si single-crystal film

T. Nishino, M. Miyake, Y. Harada et al. · IEEE Electron Device Letters · 1985 · 76 citations

Superconducting Material, Electrical Engineering, Josephson Junctions +14

0.1- mu m gate-length superconducting FET

T. Nishino, Mutsuko Hatano, H. Hasegawa et al. · IEEE Electron Device Letters · 1989 · 61 citations

Semiconductor Technology, Superconducting Material, Electrical Engineering +12

Carrier-concentration dependence of critical superconducting current induced by the proximity effect in silicon

T. Nishino, E. Yamada, U. Kawabe · Physical review. B, Condensed matter · 1986 · 60 citations

Superconducting Material, Engineering, Silicon On Insulator +17

Enhancement in conductivity for porous alumina-based AgI–Al2O3 composites by use of temperature and concentration gradient

Masayuki Nagai, T. Nishino · Solid State Ionics · 1999 · 21 citations

Materials Engineering, Concentration Gradient, Chemical Engineering +2

Influence of short coherence length on the superconducting proximity effect of silicon-coupled junctions

Mutsuko Hatano, T. Nishino, Fabrício Murai et al. · Applied Physics Letters · 1988 · 18 citations

Superconducting Material, Engineering, Silicon On Insulator +19