Statistics
Publications
12
Citations
1.3K
H-Index
12
Active since
2005
Affiliations
Samsung (South Korea)(Current)
B.-I. Ryu is an author at Samsung (South Korea) specializing in semiconductor devices, electronic materials, and memory devices.
Publications per year
2005–2007
12
12
Improvement of resistive memory switching in NiO using IrO2
D. C. Kim, Myoung‐Jae Lee, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 193 citations
Natural Sciences, Materials Engineering, Materials Science +16
Highly manufacturable high density phase change memory of 64Mb and beyond
Sung-Tae Ahn, Youjian Song, C.W. Jeong et al. · 2005 · 84 citations
Highly Scalable Phase Change Memory with CVD GeSbTe for Sub 50nm Generation
J.I. Lee, Hae‐Sim Park, S.L. Cho et al. · 2007 · 76 citations
Natural Sciences, Materials Engineering, Materials Science +11
1–5 of 12