Po-Wen Sze

AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $ \hbox{TiO}_{2}$ as Gate Dielectric

Tsu-Yi Wu, Shun-Kuan Lin, Po-Wen Sze et al. · IEEE Transactions on Electron Devices · 2009 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

The Investigation of High Quality PEDOT:PSS Film by Multilayer-Processing and Acid Treatment

Po-Wen Sze, Kuan-Wei Lee, Pin-Chiao Huang et al. · Energies · 2017 · 29 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as a Gate Dielectric

Sarbani Basu, Pramod K. Singh, Shun-Kuan Lin et al. · IEEE Transactions on Electron Devices · 2010 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

Chih-Chun Hu, Mon-Sen Lin, Tsu-Yi Wu et al. · IEEE Transactions on Electron Devices · 2011 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

Kuan-Wei Lee, Po-Wen Sze, Yu–Ju Lin et al. · IEEE Electron Device Letters · 2005 · 24 citations

Engineering, Electrical Engineering, Materials Science +17