G. T. Brown

The growth of dislocation-free Ge-DOPED InP

G. T. Brown, B. Cockayne, W.R. MacEwan · Journal of Crystal Growth · 1981 · 46 citations

Engineering, Materials Engineering, Materials Science +12

A study of the structure and electrical properties of Cd<i>x</i>Hg1−<i>x</i>Te grown by metalorganic vapor phase epitaxy (interdiffused multilayer process)

S.J.C. Irvine, J.S. Gough, J. Giess et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 44 citations

Engineering, Materials Engineering, Materials Science +17

An analysis of dislocation reduction by impurity hardening in the liquid-encapsulated Czochralski growth of 〈111〉 InP

A. S. Jordan, G. T. Brown, B. Cockayne et al. · Journal of Applied Physics · 1985 · 39 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of growth temperature on the optical, electrical and crystallographic properties of epitaxial indium gallium arsenide grown by MOCVD in an atmospheric pressure reactor

S. J. Bass, S. J. Barnett, G. T. Brown et al. · Journal of Crystal Growth · 1986 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Etch features in Czochralski-grown single crystal indium phosphide

G. T. Brown, B. Cockayne, W.R. MacEwan · Journal of Materials Science · 1980 · 34 citations

Natural Sciences, Materials Engineering, Materials Science +14