R. Murison

All solid source molecular beam epitaxy growth of1.35 µm wavelengthstrained-layer GaInAsP quantum well laser

M. Toivonen, A. Salokatve, M. Jalonen et al. · Electronics Letters · 1995 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

State-of-the-art aluminum-free 980-nm laser diodes

M. Pessa, J. Näppi, Pekka Savolainen et al. · Journal of Lightwave Technology · 1996 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

CIGS P1, P2, and P3 laser scribing with an innovative fiber laser

R. Murison, Corey M. Dunsky, M. Rekow et al. · 2010 · 19 citations

Engineering, Materials Engineering, Materials Science +17

High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy

Pekka Savolainen, M. Toivonen, H. Asonen et al. · IEEE Photonics Technology Letters · 1996 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation

M. Toivonen, Pekka Savolainen, H. Asonen et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 13 citations

Engineering, Materials Engineering, Materials Science +17