Kexiong Zhang

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

Kexiong Zhang, Masatomo Sumiya, Meiyong Liao et al. · Scientific Reports · 2016 · 51 citations · Full text

Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al₂O₃ as gate dielectric

Kexiong Zhang, Meiyong Liao, Masataka Imura et al. · Applied Physics Express · 2016 · 33 citations

Materials Science, Semiconductor Technology, Electrical Engineering +12

High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure

Kexiong Zhang, Tokio Takahashi, Daisuke Ohori et al. · Semiconductor Science and Technology · 2020 · 22 citations

Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

Dechao Yang, Hongwei Liang, Yu Qiu et al. · Applied Surface Science · 2014 · 20 citations

Materials Science, Materials Engineering, Surface Characterization +10

Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0001)

Dongsheng Wang, Hongwei Liang, Pengcheng Tao et al. · Superlattices and Microstructures · 2014 · 14 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +9