Audrey Martin

Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency<i>S</i>-parameters

C. Potier, Jean-Claude Jacquet, C. Dua et al. · International Journal of Microwave and Wireless Technologies · 2015 · 20 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +9

Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape

Alaaeddine Ramadan, Audrey Martin, Tibault Reveyrand et al. · 2009 · 12 citations

Gan Hemt Die, Electrical Engineering, Gan Power Hemts +12

Time domain envelope characterization of power amplifiers for linear and high efficiency design solutions

Pierre Medrel, Tibault Reveyrand, Audrey Martin et al. · 2013 · 12 citations

Power Amplifiers, Electrical Engineering, Circuit Analysis +11

Balanced AlGaN/GaN HEMT cascode cells: design method for wideband distributed amplifiers

Audrey Martin, Tibault Reveyrand, Michel Campovecchio et al. · Electronics Letters · 2008 · 10 citations

Electrical Engineering, Engineering, Electronic Engineering +10