Kwok K. Ng

Optimum High-k Oxide for the Best Performance of Ultra-Scaled Double-Gate MOSFETs

Mehdi Salmani-Jelodar, Hesameddin Ilatikhameneh, Sungguen Kim et al. · IEEE Transactions on Nanotechnology · 2016 · 87 citations · Full text

Engineering, Ultrascaled Mosfets, Semiconductor Device +18

Transient nature of negative capacitance in ferroelectric field-effect transistors

Kwok K. Ng, S.J. Hillenius, Alexei Gruverman · Solid State Communications · 2017 · 26 citations · Full text

Device Modeling, Electrical Engineering, Engineering +4

Device noise in silicon RF technologies

Samuel P. Martin, Vance D. Archer, D.M. Boulin et al. · Bell Labs Technical Journal · 2002 · 11 citations

Electrical Engineering, Engineering, Rf Semiconductor +11

Tunneling: The major issue in ultra-scaled MOSFETs

Mehdi Salmani Jelodar, Hesameddin Ilatikhameneh, Prasad Sarangapani et al. · 2015 · 10 citations

Device Modeling, Electrical Engineering, Engineering +13