Dong-Ho Ahn

One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm)

Dae-Hwan Kang, Dong-Ho Ahn, Ki‐Bum Kim et al. · Journal of Applied Physics · 2003 · 146 citations

Engineering, Emerging Memory Technology, Reset Operation +21

An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode

Dae-Hwan Kang, In Ho Kim, Jeung-hyun Jeong et al. · Journal of Applied Physics · 2006 · 51 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +20

Separate domain formation in Ge2Sb2Te5–SiOx mixed layer

Tae-Yon Lee, Sung-Soo Yim, Dongbok Lee et al. · Applied Physics Letters · 2006 · 40 citations

Oxide Heterostructures, Materials Science, Engineering +8

Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer

Dae-Hwan Kang, Dong-Ho Ahn, Minho Kwon et al. · Japanese Journal of Applied Physics · 2004 · 36 citations

Materials Science, Electrical Engineering, Engineering +11

Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe

Jinil Lee, Sunglae Cho, Dong-Ho Ahn et al. · IEEE Electron Device Letters · 2011 · 33 citations

Cvd Gbt, Non-volatile Memory, Engineering +17