Dongbok Lee

An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode

Dae-Hwan Kang, In Ho Kim, Jeung-hyun Jeong et al. · Journal of Applied Physics · 2006 · 51 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +20

Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices

Tae-Yon Lee, Kijoon H. P. Kim, Dongseok Suh et al. · Applied Physics Letters · 2009 · 50 citations

Materials Science, Low Thermal Conductivity, Electrical Engineering +14

Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing

Sung‐Wook Nam, Cheolkyu Kim, Minho Kwon et al. · Applied Physics Letters · 2008 · 45 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Separate domain formation in Ge2Sb2Te5–SiOx mixed layer

Tae-Yon Lee, Sung-Soo Yim, Dongbok Lee et al. · Applied Physics Letters · 2006 · 40 citations

Oxide Heterostructures, Materials Science, Engineering +8

Analysis of the electric field induced elemental separation of Ge2Sb2Te5 by transmission electron microscopy

Dongmin Kang, Dongbok Lee, Hyun-Mi Kim et al. · Applied Physics Letters · 2009 · 35 citations · Full text

Engineering, Transmission Electron Microscopy, Anode Side +16