Sachin Yadav

Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

Dian Lei, Kwang Hong Lee, Yi‐Chiau Huang et al. · IEEE Transactions on Electron Devices · 2018 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs

Dian Lei, Kwang Hong Lee, Shuyu Bao et al. · 2017 · 28 citations

Engineering, Electrical Engineering, Materials Science +9

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

David Kohen, Xuan Sang Nguyen, Sachin Yadav et al. · AIP Advances · 2016 · 16 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules

Sachin Yadav, Kian-Hua Tan, Annie et al. · 2015 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

Gate-All-Around In_0.53Ga_0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure

Kian-Hui Goh, Sachin Yadav, Kain Lu Low et al. · IEEE Transactions on Electron Devices · 2016 · 14 citations

Engineering, Electrical Engineering, Materials Science +15