Ruqi Han

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Bin Gao, Haowei Zhang, Bing Chen et al. · IEEE Electron Device Letters · 2011 · 70 citations

Engineering, Electrical Engineering, Electronic Materials +16

A novel self-aligned double-gate TFT technology

Shengdong Zhang, Ruqi Han, J.K.O. Sin et al. · IEEE Electron Device Letters · 2001 · 43 citations

Engineering, Electrical Engineering, Materials Science +16

Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates

Dedong Han, Yi Wang, Dayu Tian et al. · Microelectronic Engineering · 2005 · 36 citations

Engineering, Materials Engineering, Materials Science +12

Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain

Shengdong Zhang, Ruqi Han, J.K.O. Sin et al. · IEEE Transactions on Electron Devices · 2002 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Time-dependent transport: Time domain recursively solving NEGF technique

Danqiong Hou, Yuhui He, Xiaoyan Liu et al. · Physica E Low-dimensional Systems and Nanostructures · 2006 · 22 citations

Engineering, Aerospace Engineering, Transport Phenomena +5