J. D. McNamara - Concepedia

Author

J. D. McNamara

Virginia Commonwealth University

Also Known As

J. D. McNamara, J.D. McNamara, Joy D. McNamara, Joy McNamara, McNamara, Joy

Publications

554

Citations

H-Index

Concepts

All Affiliations

Virginia Commonwealth University Nitride Crystals (United States)Paul Drude Institute for Solid State Electronics

About

J. D. McNamara is an author at Virginia Commonwealth University specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	396
2	Applied Physics	10	10	396
3	Electrical Engineering	7	7	341
4	Physics	7	7	341
5	Materials Science	3	3	50

J. D. McNamara

Publications

514

Citations

H-Index

Page 1

	Year	Citations
Green luminescence in Mg-doped GaN M. A. Reshchikov, D. O. Demchenko, J. D. McNamara, Physical Review B Wide-bandgap SemiconductorElectrical EngineeringSolid-state LightingPoint DefectsEngineering	2014	153
Two yellow luminescence bands in undoped GaN M. A. Reshchikov, J. D. McNamara, H. Helava, Scientific Reports	2018	70
Zero-phonon line and fine structure of the yellow luminescence band in GaN M. A. Reshchikov, J. D. McNamara, Fan Zhang, Physical review. B./Physical review. B Wide-bandgap SemiconductorEngineeringFine StructureOptical PropertiesNanoelectronics	2016	65
Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn M. A. Reshchikov, M. Foussekis, J. D. McNamara, Journal of Applied Physics Electrical EngineeringBlue Luminescence BandEngineeringSolid-state LightingPhysics	2012	53
Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence M. A. Reshchikov, J. D. McNamara, Mykyta Toporkov, Scientific Reports	2016	48
Abrupt and tunable quenching of photoluminescence in ZnO J. D. McNamara, Nahla Mubarak Albarakati, M. A. Reshchikov Journal of Luminescence PhotoluminescenceEngineeringOptical PropertiesOxide ElectronicsApplied Physics	2016	21
Optically generated giant traps in high-purity GaN M. A. Reshchikov, J. D. McNamara, A. Usikov, Physical review. B./Physical review. B SemiconductorsPhotonicsOptical MaterialsEngineeringSolid-state Lighting	2016	20
Unusual properties of the RY3 center in GaN M. A. Reshchikov, Rezwan Mohammad Sayeed, Ü. Özgür, Physical review. B./Physical review. B Wide-bandgap SemiconductorElectrical EngineeringPhotoluminescencePoint DefectsEngineering	2019	20
Effects of polarity and surface treatment on Ga- and N-polar bulk GaN M. Foussekis, Josephus D. Ferguson, J. D. McNamara, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Wide-bandgap SemiconductorOptical MaterialsEngineeringBulk GanBulk Gan Samples	2012	19
Temperature-dependent Kelvin probe measurements of band bending in <i>p</i>-type GaN M. Foussekis, J. D. McNamara, A. A. Baski, Applied Physics Letters Materials ScienceBand Bending RestoresElectrical EngineeringWide-bandgap SemiconductorEngineering	2012	16

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