J. D. McNamara

Green luminescence in Mg-doped GaN

M. A. Reshchikov, D. O. Demchenko, J. D. McNamara et al. · Physical Review B · 2014 · 153 citations

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +13

Two yellow luminescence bands in undoped GaN

M. A. Reshchikov, J. D. McNamara, H. Helava et al. · Scientific Reports · 2018 · 70 citations · Full text

Zero-phonon line and fine structure of the yellow luminescence band in GaN

M. A. Reshchikov, J. D. McNamara, Fan Zhang et al. · Physical review. B./Physical review. B · 2016 · 65 citations

Wide-bandgap Semiconductor, Engineering, Fine Structure +16

Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

M. A. Reshchikov, M. Foussekis, J. D. McNamara et al. · Journal of Applied Physics · 2012 · 53 citations

Electrical Engineering, Blue Luminescence Band, Engineering +13

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

M. A. Reshchikov, J. D. McNamara, Mykyta Toporkov et al. · Scientific Reports · 2016 · 48 citations · Full text