V.D. Akhmetov

Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells

T. Arguirov, Teimuraz Mchedlidze, V.D. Akhmetov et al. · Applied Surface Science · 2007 · 16 citations

Ii-vi Semiconductor, Engineering, Physics +7

The effect of carbon and boron on the accumulation of vacancy-oxygen complexes in silicon

V.D. Akhmetov · Radiation Effects · 1980 · 15 citations

Engineering, Chemistry, Silicon On Insulator +16

Kinetics of Accumulation of Radiation Defects and Annihilation of Vacancies and Interstitials in Carbon- and Boron-Containing Silicon

V.D. Akhmetov · physica status solidi (a) · 1982 · 12 citations

Materials Science, Defect Tolerance, Electrical Engineering +13

Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon

Naoya Inoue, M. Nakatsu, Katsuto Tanahashi et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2005 · 11 citations

Engineering, Annealing Temperature Dependence, Chemistry +18

FTIR spectroscopic system with improved sensitivity

V.D. Akhmetov, Hans Richter · Materials Science in Semiconductor Processing · 2006 · 11 citations

Engineering, Optical Properties, Spectroscopy +5