Statistics
Publications
3
Citations
99
H-Index
3
Active since
2017
Bryan T. Spann is an author at National Institute of Standards and Technology.
Publications per year
2017–2023
3
3
GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
Wenjun Li, Matt D. Brubaker, Bryan T. Spann et al. · IEEE Electron Device Letters · 2017 · 44 citations · Full text
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