Nobumitsu Hirose

Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers

Masataka Higashiwaki, Nobumitsu Hirose, Toshiaki Matsui · IEEE Electron Device Letters · 2005 · 64 citations

Materials Engineering, Electron Density, Electrical Engineering +8

Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy

Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu et al. · Applied Physics Letters · 2015 · 53 citations

Materials Science, Epitaxial Growth, X-ray Spectroscopy +13

A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

Masataka Higashiwaki, Rongming Chu, Yi Pei et al. · Applied Physics Letters · 2009 · 45 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +13

Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method

Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu et al. · Journal of Materials Science · 2015 · 41 citations

Materials Engineering, Materials Science, Epitaxial Growth +12

Strain-Relaxed Si_1-xGe_x and Strained Si Grown by Sputter Epitaxy

Hiroaki Hanafusa, Akifumi Kasamatsu, Nobumitsu Hirose et al. · Japanese Journal of Applied Physics · 2008 · 23 citations

Materials Engineering, Materials Science, Electrical Engineering +12