Dongping Xiao

Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs

Giovanni Crupi, Dongping Xiao, Dominique Schreurs et al. · IEEE Transactions on Microwave Theory and Techniques · 2006 · 179 citations

Device Modeling, Electrical Engineering, Semiconductor Device +13

Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs

I. Angelov, Kristoffer Andersson, Dominique Schreurs et al. · 2006 · 117 citations

Sic Fet Devices, Electrical Engineering, Engineering +14

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

Kai Cheng, Maarten Leys, Joff Derluyn et al. · Journal of Crystal Growth · 2006 · 53 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +7

Determination and Validation of New Nonlinear FinFET Model Based on Lookup Tables

Giovanni Crupi, Dominique Schreurs, Dongping Xiao et al. · IEEE Microwave and Wireless Components Letters · 2007 · 43 citations

Device Modeling, Electrical Engineering, Engineering +11

Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs

Dongping Xiao, Dominique Schreurs, W. De Raedt et al. · Solid-State Electronics · 2008 · 15 citations

Parasitic Loading Effects, Electrical Engineering, Engineering +8