Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs

Abstract

The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements. Special attention was paid to improve the management of harmonics and to provide a more physical treatment of the dispersion. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.