Sona P. Kumar

Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor

Sona P. Kumar, Anju Agrawal, Rishu Chaujar et al. · Microelectronics Reliability · 2010 · 101 citations

Engineering, Electrical Engineering, Materials Science +16

Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

Sona P. Kumar, Anju Agrawal, Rishu Chaujar et al. · Superlattices and Microstructures · 2008 · 41 citations

Engineering, Materials Science, Physics +14

An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications

Sona P. Kumar, Anju Agrawal, Sneha Kabra et al. · Microelectronics Journal · 2006 · 35 citations

Engineering, Electrical Engineering, Microelectronics +16

Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation

Sona P. Kumar, Anju Agrawal, Rishu Chaujar et al. · Microelectronics Journal · 2007 · 34 citations

Engineering, Electrical Engineering, Materials Science +17