M. A. Sinitsyn

Hydrogen effects in III-nitride MOVPE

E.V. Yakovlev, A.S. Segal, A.V. Lobanova et al. · Journal of Crystal Growth · 2008 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +7

Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers

W. V. Lundin, A. V. Sakharov, E. E. Zavarin et al. · Semiconductors · 2009 · 32 citations

Engineering, Materials Engineering, Materials Science +16

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

A. V. Sakharov, W. V. Lundin, E. E. Zavarin et al. · Semiconductors · 2009 · 17 citations

Engineering, Electrical Engineering, Materials Science +16

Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide

S. G. Zhukov, E. E. Zavarin, W. V. Lundin et al. · Technical Physics Letters · 2012 · 16 citations

Engineering, Materials Engineering, Materials Science +17