Fangzhou Wang

Statistics

Publications

Citations

491

H-Index

Active since

2017

Affiliations

University of Electronic Science and Technology of China(Current)

National Engineering Research Center of Electromagnetic Radiation Control Materials

Chinese Academy of Sciences

National University of Singapore

Songshan Lake Materials Laboratory

Fangzhou Wang is an author at University of Electronic Science and Technology of China specializing in semiconductor devices, electrical engineering, and engineering.

ORCID

Publications per year

2017–2024

Publications

Analytical Switching Loss Model for GaN-Based Control Switch and Synchronous Rectifier in Low-Voltage Buck Converters

Yajie Xin, Wanjun Chen, Ruize Sun et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 2019 · 37 citations

Engineering, Electrical Engineering, Circuit Theory +15

Investigation on the Long-Term Reliability of High-Voltage p-GaN HEMT by Repetitively Transient Overcurrent

Yijun Shi, Wanjun Chen, Xingtao Cui et al. · IEEE Transactions on Electron Devices · 2018 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs

Yajie Xin, Wanjun Chen, Ruize Sun et al. · 2020 · 30 citations

Engineering, Electrical Engineering, Electronic Materials +15

Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism

Fangzhou Wang, Wanjun Chen, Xiaorui Xu et al. · IEEE Transactions on Electron Devices · 2020 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

A Novel Thyristor-Based Bidirectional SSCB With Controllable Current Breaking Capability

Xiaorui Xu, Wanjun Chen, Chao Liu et al. · IEEE Transactions on Power Electronics · 2021 · 27 citations

Engineering, Electrical Engineering, Microelectronics +9

1–5 of 25