Ruize Sun - Concepedia

Author

Ruize Sun

University of Electronic Science and Technology of China ORCID

Also Known As

Rui-Ze Sun, RuiZe Sun, Ruize Sun

125

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

University of Electronic Science and Technology of China National Engineering Research Center of Electromagnetic Radiation Control Materials National University of Singapore Xi’an Jiaotong-Liverpool University University of Liverpool

About

Ruize Sun is an author at University of Electronic Science and Technology of China specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	30	715
2	Applied Physics	14	17	373
3	Computer Engineering	4	4	100
4	Natural Sciences	2	2	47
5	Computer Science	1	1	21

Ruize Sun

Publications

879

Citations

H-Index

Page 1

	Year	Citations
Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters Miao Cui, Ruize Sun, Qinglei Bu, IEEE Access Wide-bandgap SemiconductorElectrical EngineeringGate DriversEngineeringChip Size	2019	51
Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters Miao Cui, Qinglei Bu, Yutao Cai, Japanese Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringMonolithic Integration DesignEngineeringGate Driver	2019	49
All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs Ruize Sun, Yung C. Liang, Yee‐Chia Yeo, IEEE Journal of Emerging and Selected Topics in Power Electronics Converter IcElectrical EngineeringEngineeringPower IcPower Device	2019	48
An Efficient and Reliable Solid-State Circuit Breaker Based on Mixture Device Xiaorui Xu, Wanjun Chen, Chao Liu, IEEE Transactions on Power Electronics Mixture DeviceElectrical EngineeringDc Distribution SystemsEngineeringOuter Circuit	2021	42
Analytical Switching Loss Model for GaN-Based Control Switch and Synchronous Rectifier in Low-Voltage Buck Converters Yajie Xin, Wanjun Chen, Ruize Sun, IEEE Journal of Emerging and Selected Topics in Power Electronics Electrical EngineeringEngineeringPower DeviceSynchronous RectifierPower Loss	2019	36
Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism Fangzhou Wang, Wanjun Chen, Xiaorui Xu, IEEE Transactions on Electron Devices Electrical EngineeringTotal Switching LossEngineeringP-doped Dcs LayerSemiconductor Device	2020	30
Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs Yajie Xin, Wanjun Chen, Ruize Sun, Transmission Line PulseElectrical EngineeringEngineeringElectrostatic DischargeElectronic Engineering	2020	29
Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications Ruize Sun, Yung C. Liang, Yee‐Chia Yeo, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringPower Switching ApplicationsNanoelectronics	2017	28
A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits Ang Li, Yi Shen, Ziqian Li, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering4-Transistor Monolithic Solution	2022	28
Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation Ruize Sun, Xinghuan Chen, Chao Liu, Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringNeutron RadiationEngineering	2021	26

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