Á. Guzmán - Concepedia

Author

Á. Guzmán

Also Known As

, A Guzman, A Guzmán, A. G. Castellanos Guzman, A. Guzman, A. Guzmán, A. Guzmán, A.G. Castellanos Guzman, Alvaro Guzman, Alvaro Guzman-Bautista

Publications

787

Citations

H-Index

Concepts

All Affiliations

Universidad Politécnica de Madrid Universidad de Cádiz Paul Drude Institute for Solid State Electronics Eindhoven University of Technology Shizuoka University

ÁG

About

Á. Guzmán is an author at Universidad Politécnica de Madrid specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	20	529
2	Applied Physics	14	20	529
3	Electrical Engineering	7	7	149
4	Materials Engineering	2	2	25
5	Natural Sciences	1	1	25

Á. Guzmán

Publications

620

Citations

H-Index

Page 1

	Year	Citations
GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations J. M. Ulloa, R. Gargallo‐Caballero, M. Bozkurt, Physical Review B Optical MaterialsEngineeringExcitonic Band GapLuminescence PropertySemiconductor Nanostructures	2010	94
High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes G. Tabares, A. Hierro, J. M. Ulloa, Applied Physics Letters Short Wavelength OpticOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices	2010	61
Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy A. Hierro, J. M. Ulloa, J.‐M. Chauveau, Journal of Applied Physics Crystal StructurePhotoluminescenceCarrier Localization StatesEngineeringPhysics	2003	60
Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces E. Luna, Á. Guzmán, A. Trampert, Physical Review Letters	2012	41
Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates A. Trampert, J.‐M. Chauveau, K. H. Ploog, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertySemiconductor Nanostructures	2004	34
Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate A. D. Utrilla, Davide F. Grossi, D.F. Reyes, Applied Surface Science Materials ScienceNanoscale SystemCapping RateEngineeringNanotechnology	2018	32
General route for the decomposition of InAs quantum dots during the capping process D. González, D.F. Reyes, A. D. Utrilla, Nanotechnology EngineeringSemiconductor NanostructuresIi-vi SemiconductorQuantum ComputingCapping Process	2016	25
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer J. M. Ulloa, D.F. Reyes, Kenji Yamamoto, Applied Physics Letters Materials ScienceInas/gaas Quantum DotsIi-vi SemiconductorIndependent TuningHole Confinement	2012	23
Role of N ions in the optical and morphological properties of InGaAsN quantum wells for 1.3–1.5μm applications J. Miguel‐Sánchez, Á. Guzmán, E. Muñoz Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertySemiconductor Nanostructures	2004	22
Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells Fumitaro Ishikawa, Á. Guzmán, O. Brandt, Journal of Applied Physics Ii-vi SemiconductorPhotonicsPhotoluminescenceEngineeringPhysics	2008	20

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