Á. Guzmán

GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

J. M. Ulloa, R. Gargallo‐Caballero, M. Bozkurt et al. · Physical Review B · 2010 · 94 citations · Full text

Optical Materials, Engineering, Excitonic Band Gap +19

High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes

G. Tabares, A. Hierro, J. M. Ulloa et al. · Applied Physics Letters · 2010 · 61 citations

Short Wavelength Optic, Optical Materials, Engineering +18

Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy

A. Hierro, J. M. Ulloa, J.‐M. Chauveau et al. · Journal of Applied Physics · 2003 · 60 citations

Crystal Structure, Photoluminescence, Carrier Localization States +13

Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

E. Luna, Á. Guzmán, A. Trampert et al. · Physical Review Letters · 2012 · 41 citations · Full text

Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates

A. Trampert, J.‐M. Chauveau, K. H. Ploog et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 34 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +21